11/06/2026
pSemi Expands UltraCMOS+™ Portfolio with PE423213 Wideband RF Switch
New 0.3-10.6 GHz SPDT switch combines 95 nA current consumption, low insertion loss, high isolation, and 100 ns switching; debuts at Electronica 2026.
San Diego, Calif. - November 5, 2026 - pSemi® Corporation, a Murata company, announced the PE423213, a HaRP™ technology-enhanced reflective single-pole double-throw (SPDT) RF switch operating from 0.3 to 10.6 GHz. Designed for ISM, WLAN, Wi-Fi, Bluetooth, and ultra-wideband (UWB) applications, it supports secure access control, smart-home automation, asset and personal tracking, indoor navigation, security and surveillance, wearables, and industrial IoT.
Built on pSemi’s patented UltraCMOS+™ silicon-on-insulator process, the PE423213 delivers broadband RF performance with typical supply current of just 95 nA. Typical insertion loss is 0.4 dB at 6 GHz, 0.5 dB at 8.5 GHz, and 0.7 dB at 10.6 GHz, with isolation of 28 dB, 25 dB, and 18 dB at the same frequencies. A typical switching time of 100 ns enables responsive RF path selection.
The device is offered in a compact 6-lead, 1.6 × 1.6 mm DFN package, operates from -40°C to +105°C and provides a 2,000 V ESD rating, making it well suited for space-constrained, battery-powered and temperature-sensitive connected devices.
pSemi will showcase the PE423213 publicly for the first time at Electronica 2026, November 10-13 at Messe München in Munich, Germany. Visitors can see the product and meet pSemi representatives at the Murata booth in Hall C4, Booth 179 (C4-179).
The PE423213 is available under order code PE423213A-Z; the evaluation kit is EK423213-01. Visit pSemi.com or contact sales@psemi.com for more information.
San Diego, Calif. - November 5, 2026 - pSemi® Corporation, a Murata company, announced the PE423213, a HaRP™ technology-enhanced reflective single-pole double-throw (SPDT) RF switch operating from 0.3 to 10.6 GHz. Designed for ISM, WLAN, Wi-Fi, Bluetooth, and ultra-wideband (UWB) applications, it supports secure access control, smart-home automation, asset and personal tracking, indoor navigation, security and surveillance, wearables, and industrial IoT.
Built on pSemi’s patented UltraCMOS+™ silicon-on-insulator process, the PE423213 delivers broadband RF performance with typical supply current of just 95 nA. Typical insertion loss is 0.4 dB at 6 GHz, 0.5 dB at 8.5 GHz, and 0.7 dB at 10.6 GHz, with isolation of 28 dB, 25 dB, and 18 dB at the same frequencies. A typical switching time of 100 ns enables responsive RF path selection.
The device is offered in a compact 6-lead, 1.6 × 1.6 mm DFN package, operates from -40°C to +105°C and provides a 2,000 V ESD rating, making it well suited for space-constrained, battery-powered and temperature-sensitive connected devices.
pSemi will showcase the PE423213 publicly for the first time at Electronica 2026, November 10-13 at Messe München in Munich, Germany. Visitors can see the product and meet pSemi representatives at the Murata booth in Hall C4, Booth 179 (C4-179).
The PE423213 is available under order code PE423213A-Z; the evaluation kit is EK423213-01. Visit pSemi.com or contact sales@psemi.com for more information.
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Contact for press inquiries
Nico Giatrelis <ngiatrelis@psemi.com>
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