PE566212 and PE566213 integrate high-performance transmit and receive paths in a compact monolithic UltraCMOS+™ solution for Thread, Bluetooth^® and Zigbee^® desig

San Diego, CA – October 9, 2026 – pSemi^® Corporation, a Murata company, announced the PE566212 and PE566213, fully monolithic 2.4 GHz silicon-on-insulator (SOI) front-end modules for Thread, Bluetooth and Zigbee IoT applications. Designed for smart home, wireless audio, wearable, sensing, and other connected devices, each FEM integrates a power amplifier, low-noise amplifier, and RF switch in a compact 14-lead 1.8 mm × 1.8 mm × 0.63 mm LGA package, simplifying high-performance RF design with improved transmit and receive performance.
Both devices provide output power up to +20 dBm, a 1.8 dB receive noise figure at 14 dB gain, and typical bypass path loss of 0.8 dB. They can extend range by 5 to 10 times compared with a standalone SoC. The PE566212 supports Bluetooth BDR and BLE with 22.5 dB of transmit digital gain control in 1.5 dB steps. The PE566213 supports Bluetooth BDR and BLE, plus Bluetooth EDR at up to +12 dBm, with 15 dB of gain control in 1 dB steps, making it ideal for wireless audio, wearables and other throughput-focused applications.
Built on pSemi’s patented UltraCMOS+™ process and more than three decades of RF innovation, the FEMs provide a highly integrated, reliable silicon-based alternative to traditional GaAs and SiGe front ends. Supported by pSemi’s RF semiconductor expertise and Murata’s global manufacturing scale and quality leadership, the portfolio gives customers a trusted new source for next generation 2.4 GHz IoT connectivity and greater long-term supply confidence.
The PE566212 and PE566213, along with evaluation boards, are available now. Visit pSemi.com or contact sales@psemi.com for more information.