Innoscience is an Integrated Device Manufacturer (IDM) founded in 2015. Our vision is to create an energy ecosystem with effective and low-cost Gallium-Nitride-on-Silicon (GaN-on-Si) power solutions. In 2017, Innoscience first established a mass production 8-inch wafer line for GaN-on-Si devices in Zhuhai. with the aim to fulfill the rapidly growing power demands. In September 2020, Innoscience inaugurated a new facility in Suzhou. As a cutting-edge GaN technology provider, Innoscience’s 1,400+ employees and over 300 R&D experts engineers are dedicated to delivering high performance and high reliability GaN power devices that can be widely used in diverse applications including cloud computing, electric vehicles (EV) and automotive, portable devices, mobile phones, chargers and adapters.